Attribute
Description
Manufacturer Part Number
2SK3377-Z-AZ
Description
2SK3377-Z-AZ - SWITCHING N-CHANN
Manufacturer Lead Time
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Stock:

Distributor: 160

Quantity Unit Price Ext. Price
100000 ₹ 53.79000 ₹ 53,79,000.00
10000 ₹ 64.20000 ₹ 6,42,000.00
1000 ₹ 72.01000 ₹ 72,010.00
500 ₹ 78.08000 ₹ 39,040.00
100 ₹ 86.76000 ₹ 8,676.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Obsolete
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 60 V
Continuous Drain Current at 25C 20A (Ta)
Gate Drive Voltage Range 4V, 10V
Max On-State Resistance 44mOhm @ 10A, 10V
Max Threshold Gate Voltage 2.5V @ 1mA
Max Gate Charge at Vgs 17 nC @ 10 V
Maximum Gate Voltage ±20V
Max Input Cap at Vds 760 pF @ 10 V
Transistor Special Function -
Max Heat Dissipation 1W (Ta), 30W (Tc)
Ambient Temp Range 150°C
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type TO-252 (MP-3Z)
Component Housing Style TO-252-3, DPAK (2 Leads + Tab), SC-63

Description

Is capable of sustaining a continuous drain current (Id) of 20A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 60 V. Supports the drive voltage noted at 4V, 10V for RdsOn control. Includes FET category defined as N-Channel. Ensures maximum 17 nC @ 10 V gate charge at Vgs for improved switching efficiency. Maintains 17 nC @ 10 V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 760 pF @ 10 V at Vds to protect the device. The input capacitance is specified at 760 pF @ 10 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case TO-252-3, DPAK (2 Leads + Tab), SC-63 that offers mechanical and thermal protection. Type of package TO-252 (MP-3Z) that preserves the integrity of the device. The maximum power dissipation 1W (Ta), 30W (Tc) for efficient thermal management. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 17 nC @ 10 V for MOSFET performance. Maximum Rds(on) at Id and Vgs 44mOhm @ 10A, 10V for MOSFET specifications. Supplier package type TO-252 (MP-3Z) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±20V for MOSFET specifications. Maximum Vgs(th) at Id 2.5V @ 1mA for MOSFET threshold specifications.