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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Silicon Carbide Schottky | |
| Reverse DC Voltage(Vr) | 650V | |
| Average DC Output Current | 8A | |
| Forward Voltage (Vf) | 1.8V @ 8A | |
| Operational Speed Rating | No Recovery Time > 500mA (Io) | |
| trr Recovery | 0ns | |
| Reverse Leakage Current @ Vr | 60µA @ 650V | |
| Capacitance at Voltage and Frequency | 441pF @ 0V, 1MHz | |
| Heat Dissipation Resistance | 1.5°C/W Jc | |
| Junction Temp Range | -55°C ~ 175°C | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-2 |
Description
Assesses resistance at forward current 1.8V @ 8A for LED or diode testing. Enables capacitance at voltage Vr and frequency indicated as 441pF @ 0V, 1MHz. Provides an average rectified current (Io) recorded at 8A. Shows the type of diode identified as Silicon Carbide Schottky. Mounting configuration Through Hole for structural stability. Resistance during the on-state 1.5°C/W Jc for effective conduction. Temperature range -55°C ~ 175°C at the junction to safeguard components. Style of the enclosure/case TO-220-2 that offers mechanical and thermal protection. Reverse recovery time 0ns for switching diodes. Operational speed No Recovery Time > 500mA (Io) for mechanical or data tasks. Thermal resistance measurement 1.5°C/W Jc for managing temperature. Maximum Vce(on) at Vge Silicon Carbide Schottky for transistor specifications.
