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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 30V | |
| Average DC Output Current | 500mA | |
| Forward Voltage (Vf) | 650mV @ 500mA | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 10ns | |
| Reverse Leakage Current @ Vr | 1.5µA @ 15V | |
| Capacitance at Voltage and Frequency | 6pF @ 10V, 1MHz | |
| Heat Dissipation Resistance | 200°C/W Ja | |
| Junction Temp Range | -55°C ~ 150°C | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 2-UDFN |
Description
Assesses resistance at forward current 650mV @ 500mA for LED or diode testing. Enables capacitance at voltage Vr and frequency indicated as 6pF @ 10V, 1MHz. Provides an average rectified current (Io) recorded at 500mA. Shows the type of diode identified as Schottky. Mounting configuration Surface Mount for structural stability. Resistance during the on-state 200°C/W Ja for effective conduction. Temperature range -55°C ~ 150°C at the junction to safeguard components. Style of the enclosure/case 2-UDFN that offers mechanical and thermal protection. Reverse recovery time 10ns for switching diodes. Operational speed Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data tasks. Thermal resistance measurement 200°C/W Ja for managing temperature. Maximum Vce(on) at Vge Schottky for transistor specifications.
