200mA (Io), Leakage at Vr,3µA @ 100V, Attachment Mounting Style,Surface Mount, Component Housing Style,TO-252-3, DPak (2 Leads + Tab), SC-63./>
Attribute
Description
Manufacturer Part Number
STPS15H100CB-TR
Manufacturer
Description
STPS15H100CB-TR, Schottky 100V 2 x 7.5A
Manufacturer Lead Time
55 weeks
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
5000 ₹ 24.47000 ₹ 1,22,350.00
2500 ₹ 28.28000 ₹ 70,700.00
1000 ₹ 32.67000 ₹ 32,670.00
500 ₹ 35.98000 ₹ 17,990.00
100 ₹ 46.24000 ₹ 4,624.00
10 ₹ 61.45000 ₹ 614.50
1 ₹ 74.91000 ₹ 74.91

Stock:

Distributor: 145


Quantity Unit Price Ext. Price
1035 ₹ 25.89000 ₹ 26,796.15
775 ₹ 28.88000 ₹ 22,382.00
600 ₹ 29.88000 ₹ 17,928.00
435 ₹ 30.87000 ₹ 13,428.45
280 ₹ 31.86000 ₹ 8,920.80
115 ₹ 38.83000 ₹ 4,465.45

Stock:

Distributor: 116


Quantity Unit Price Ext. Price
40000 ₹ 64.85000 ₹ 25,94,000.00
20000 ₹ 65.92000 ₹ 13,18,400.00
10000 ₹ 66.94000 ₹ 6,69,400.00
5000 ₹ 68.00000 ₹ 3,40,000.00
2500 ₹ 69.17000 ₹ 1,72,925.00

Stock:

Distributor: 142


Quantity Unit Price Ext. Price
1 ₹ 72.09000 ₹ 72.09
10 ₹ 60.52000 ₹ 605.20
100 ₹ 45.39000 ₹ 4,539.00
500 ₹ 35.60000 ₹ 17,800.00

Product Attributes

Type Description
Category
Diode Setup 1 Pair Common Cathode
Semiconductor Diode Category Schottky
Reverse DC Voltage(Vr) (Max) 100V
Average DC Output Current 7.5A
Forward Voltage (Vf) 800mV @ 7.5A
Operational Speed Rating Fast Recovery =< 500ns, > 200mA (Io)
trr Recovery -
Leakage at Vr 3µA @ 100V
Attachment Mounting Style Surface Mount
Component Housing Style TO-252-3, DPak (2 Leads + Tab), SC-63

Description

Assesses resistance at forward current 800mV @ 7.5A for LED or diode testing. Provides an average rectified current (Io) recorded at 7.5A. Employs diode configuration indicated as 1 Pair Common Cathode. Shows the type of diode identified as Schottky. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-252-3, DPak (2 Leads + Tab), SC-63 that offers mechanical and thermal protection. Reverse leakage current at Vr 3µA @ 100V for diode specifications. Operational speed Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data tasks. Maximum Vce(on) at Vge Schottky for transistor specifications.