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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Off-State Voltage Rating | 400 V | |
| Max Gate Trigger Volts | 1.5 V | |
| Max Gate Trigger Amps | 200 µA | |
| Max On-State Voltage Drop | 2 V | |
| Max Average On-State Current | - | |
| Max RMS On-State Current | 8 A | |
| Maximum Holding Current | 6 mA | |
| Maximum Off-State Current | 10 µA | |
| Non-Repetitive Surge 50/60Hz | 100A @ 60Hz | |
| Silicon Controlled Rectifier Style | Sensitive Gate | |
| Ambient Temp Range | -40°C ~ 110°C | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 | |
| Vendor Package Type | TO-220AB |
Description
Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Features a maximum gate trigger current (Igt) rated at 200 µA. Indicates the maximum holding current recorded at 6 mA. Is designed to manage surge current Itsm rated at 100A @ 60Hz for 50/60Hz. Features a maximum off-state current of 10 µA. Supports RMS on-state current rated at 8 A. Mounting configuration Through Hole for structural stability. Temperature range -40°C ~ 110°C for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case TO-220-3 that offers mechanical and thermal protection. Type of package TO-220AB that preserves the integrity of the device. Product status Obsolete concerning availability and lifecycle. The Sensitive Gate SCR type for thyristor properties. Supplier package type TO-220AB for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum gate trigger voltage 1.5 V for SCR devices. The voltage 400 V when the device is not active for switches or semiconductors. The highest voltage drop Vtm 2 V in the active state for semiconductors.
