Configured in a manner identified as 2 N-Channel (Dual) Matched Pair. Supports a Vdss drain-to-source voltage rated at 10.6V. The maximum input capacitance reaches 2.5pF @ 5V at Vds to protect the device. The input capacitance is specified at 2.5pF @ 5V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range 0°C ~ 70°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 8-DIP (0.300", 7.62mm) that offers mechanical and thermal protection. Type of package 8-PDIP that preserves the integrity of the device. Maximum power capability 500mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 500Ohm @ 4V for MOSFET specifications. Classification series for the product or component EPAD®, Zero Threshold™. Supplier package type 8-PDIP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 20mV @ 1µA for MOSFET threshold specifications.
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