Attribute
Description
Manufacturer Part Number
ALD1117SAL
Description
MOSFET 2P-CH 10.6V 8SOIC
Manufacturer Lead Time
--
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
1000 ₹ 185.79000 ₹ 1,85,790.00
500 ₹ 195.10000 ₹ 97,550.00
100 ₹ 234.60000 ₹ 23,460.00
50 ₹ 257.17000 ₹ 12,858.50
1 ₹ 490.39000 ₹ 490.39

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 P-Channel (Dual) Matched Pair
Transistor Special Function -
Drain-Source Breakdown Volts 10.6V
Continuous Drain Current at 25C -
Max On-State Resistance 1800Ohm @ 5V
Max Threshold Gate Voltage 1.2V @ 1µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 3pF @ 5V
Maximum Power Handling 500mW
Ambient Temp Range 0°C ~ 70°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.154", 3.90mm Width)
Vendor Package Type 8-SOIC

Description

Configured in a manner identified as 2 P-Channel (Dual) Matched Pair. Supports a Vdss drain-to-source voltage rated at 10.6V. The maximum input capacitance reaches 3pF @ 5V at Vds to protect the device. The input capacitance is specified at 3pF @ 5V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 0°C ~ 70°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOIC that preserves the integrity of the device. Maximum power capability 500mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 1800Ohm @ 5V for MOSFET specifications. Supplier package type 8-SOIC for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.2V @ 1µA for MOSFET threshold specifications.