Attribute
Description
Manufacturer Part Number
AONY36352
Description
MOSFET 2N-CH 30V 18.5A 8DFN
Manufacturer Lead Time
14 weeks
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 145

Quantity Unit Price Ext. Price
875 ₹ 30.52000 ₹ 26,705.00
705 ₹ 31.78000 ₹ 22,404.90
540 ₹ 33.05000 ₹ 17,847.00
375 ₹ 35.60000 ₹ 13,350.00
245 ₹ 36.87000 ₹ 9,033.15
115 ₹ 39.41000 ₹ 4,532.15

Stock:

Distributor: 117


Quantity Unit Price Ext. Price
9000 ₹ 40.05000 ₹ 3,60,450.00
6000 ₹ 40.34000 ₹ 2,42,040.00
3000 ₹ 43.27000 ₹ 1,29,810.00
1000 ₹ 49.09000 ₹ 49,090.00
500 ₹ 53.68000 ₹ 26,840.00
100 ₹ 67.92000 ₹ 6,792.00
10 ₹ 101.19000 ₹ 1,011.90
1 ₹ 159.31000 ₹ 159.31

Stock:

Distributor: 11


Quantity Unit Price Ext. Price
500 ₹ 55.00000 ₹ 27,500.00
100 ₹ 58.92000 ₹ 5,892.00
10 ₹ 65.59000 ₹ 655.90
3 ₹ 74.14000 ₹ 222.42
1 ₹ 85.44000 ₹ 85.44

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual) Asymmetrical
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Max On-State Resistance 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Max Threshold Gate Voltage 2.1V @ 250µA, 1.9V @ 250µA
Max Gate Charge at Vgs 20nC @ 10V, 52nC @ 10V
Max Input Cap at Vds 820pF @ 15V, 2555pF @ 15V
Maximum Power Handling 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-PowerSMD, Flat Leads
Vendor Package Type 8-DFN (5x6)

Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Dual) Asymmetrical. Is capable of sustaining a continuous drain current (Id) of 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 20nC @ 10V, 52nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 20nC @ 10V, 52nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 820pF @ 15V, 2555pF @ 15V at Vds to protect the device. The input capacitance is specified at 820pF @ 15V, 2555pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerSMD, Flat Leads that offers mechanical and thermal protection. Type of package 8-DFN (5x6) that preserves the integrity of the device. Maximum power capability 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 20nC @ 10V, 52nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V for MOSFET specifications. Supplier package type 8-DFN (5x6) for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 2.1V @ 250µA, 1.9V @ 250µA for MOSFET threshold specifications.