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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | SiCFET N-Channel, Silicon Carbide | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | 31.6A (Tc) | |
| Max On-State Resistance | 98 mOhm @ 20A, 20V | |
| Max Threshold Gate Voltage | 2.2V @ 1mA | |
| Gate Charge at Vgs | 49.2nC @ 20V | |
| Input Cap at Vds | 950pF @ 1000V | |
| Maximum Power Handling | 208W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Assesses resistance at forward current SiCFET N-Channel, Silicon Carbide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 31.6A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Includes FET category defined as SiCFET N-Channel, Silicon Carbide. Maintains 49.2nC @ 20V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 950pF @ 1000V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-247-3 that offers mechanical and thermal protection. Maximum power capability 208W for safeguarding the device. Maximum Rds(on) at Id 49.2nC @ 20V for MOSFET performance. Maximum Rds(on) at Id and Vgs 98 mOhm @ 20A, 20V for MOSFET specifications. Maximum Vgs(th) at Id 2.2V @ 1mA for MOSFET threshold specifications.
