Attribute
Description
Manufacturer Part Number
CGH40006S
Manufacturer
Description
FET RF HEMT 6GHZ 28V 3X3QFN
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class HEMT
Oscillation Rate Hz 0Hz ~ 6GHz
Amplification Factor 12dB
Test Condition Voltage 28V
Rated Current -
Signal-to-Noise Degradation -
Testing Current Value 100mA
Output Wattage Rating 8W
Rated Operating Voltage 84V
Component Housing Style 6-VDFN Exposed Pad

Description

Assesses resistance at forward current 12dB for LED or diode testing. Assessed at current levels outlined by 100mA. Runs at a frequency of 0Hz ~ 6GHz. Delivers 12dB gain to enhance signal amplification effectiveness. Style of the enclosure/case 6-VDFN Exposed Pad that offers mechanical and thermal protection. The necessary output power 8W for peak device efficiency. Classification of transistor HEMT for circuit design. Maximum Vce(on) at Vge 12dB for transistor specifications. The operating voltage rating of the device 84V. Voltage 28V applied during component testing.