Attribute
Description
Manufacturer Part Number
EPC2100ENGRT
Manufacturer
Description
MOSFET 2N-CH 30V 10A DIE
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line eGaN®
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform GaNFET (Gallium Nitride)
Setup Arrangement 2 N-Channel (Half Bridge)
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 10A (Ta), 40A (Ta)
Max On-State Resistance 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Max Threshold Gate Voltage 2.5V @ 4mA, 2.5V @ 16mA
Max Gate Charge at Vgs 4.9nC @ 15V, 19nC @ 15V
Max Input Cap at Vds 475pF @ 15V, 1960pF @ 15V
Maximum Power Handling -
Ambient Temp Range -40°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style Die
Vendor Package Type Die