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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | eGaN® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Core Technology Platform | GaNFET (Gallium Nitride) | |
| Setup Arrangement | 2 N-Channel (Half Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 9.5A, 38A | |
| Max On-State Resistance | 11.5mOhm @ 20A, 5V | |
| Max Threshold Gate Voltage | 2.5V @ 2mA | |
| Max Gate Charge at Vgs | 2.7nC @ 5V | |
| Max Input Cap at Vds | 300pF @ 30V | |
| Maximum Power Handling | - | |
| Ambient Temp Range | -40°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | Die | |
| Vendor Package Type | Die |
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