Attribute
Description
Manufacturer Part Number
EPC2103ENGRT
Manufacturer
Description
MOSFET 2N-CH 80V 23A DIE
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line eGaN®
IC Encapsulation Type Tape & Reel (TR)
Core Technology Platform GaNFET (Gallium Nitride)
Setup Arrangement 2 N-Channel (Half Bridge)
Transistor Special Function -
Drain-Source Breakdown Volts 80V
Continuous Drain Current at 25C 23A
Max On-State Resistance 5.5mOhm @ 20A, 5V
Max Threshold Gate Voltage 2.5V @ 7mA
Max Gate Charge at Vgs 6.5nC @ 5V
Max Input Cap at Vds 7600pF @ 40V
Maximum Power Handling -
Ambient Temp Range -
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style Die
Vendor Package Type Die