Attribute
Description
Manufacturer Part Number
EPC2107
Manufacturer
Description
MOSFET 3N-CH 100V 9BGA
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line eGaN®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Last Time Buy
Core Technology Platform GaNFET (Gallium Nitride)
Setup Arrangement 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Transistor Special Function -
Drain-Source Breakdown Volts 100V
Continuous Drain Current at 25C 1.7A, 500mA
Max On-State Resistance 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Max Threshold Gate Voltage 2.5V @ 100µA, 2.5V @ 20µA
Max Gate Charge at Vgs 0.16nC @ 5V, 0.044nC @ 5V
Max Input Cap at Vds 16pF @ 50V, 7pF @ 50V
Maximum Power Handling -
Ambient Temp Range -40°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 9-VFBGA
Vendor Package Type 9-BGA (1.35x1.35)