Attribute
Description
Manufacturer Part Number
EPC2110
Manufacturer
Description
MOSFET 2N-CH 120V 3.4A DIE
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line eGaN®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform GaNFET (Gallium Nitride)
Setup Arrangement 2 N-Channel (Dual) Common Source
Transistor Special Function -
Drain-Source Breakdown Volts 120V
Continuous Drain Current at 25C 3.4A
Max On-State Resistance 60mOhm @ 4A, 5V
Max Threshold Gate Voltage 2.5V @ 700µA
Max Gate Charge at Vgs 0.8nC @ 5V
Max Input Cap at Vds 80pF @ 60V
Maximum Power Handling -
Ambient Temp Range -40°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style -
Component Housing Style Die
Vendor Package Type Die