Attribute
Description
Manufacturer Part Number
FS8205A
Manufacturer
Description
DUAL N-CHANNEL ENHANCEMENT MODE
Manufacturer Lead Time
1 week
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
150000 ₹ 3.89000 ₹ 5,83,500.00
75000 ₹ 4.17000 ₹ 3,12,750.00
30000 ₹ 4.62000 ₹ 1,38,600.00
21000 ₹ 4.82000 ₹ 1,01,220.00
15000 ₹ 5.04000 ₹ 75,600.00
9000 ₹ 5.39000 ₹ 48,510.00
6000 ₹ 5.71000 ₹ 34,260.00
3000 ₹ 6.34000 ₹ 19,020.00
1000 ₹ 7.57000 ₹ 7,570.00
500 ₹ 8.54000 ₹ 4,270.00
100 ₹ 11.53000 ₹ 1,153.00
10 ₹ 18.42000 ₹ 184.20
1 ₹ 30.26000 ₹ 30.26

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Cut Tape (CT)
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel, Common Drain
Transistor Special Function -
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 6A (Ta)
Max On-State Resistance 27mOhm @ 6A, 4.5V
Max Threshold Gate Voltage 1.2V @ 250µA
Max Gate Charge at Vgs 17.6nC @ 4.5V
Max Input Cap at Vds 910pF @ 20V
Maximum Power Handling 2W (Ta)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style SOT-23-6
Vendor Package Type SOT-23-6

Description

Configured in a manner identified as 2 N-Channel, Common Drain. Is capable of sustaining a continuous drain current (Id) of 6A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Ensures maximum 17.6nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 17.6nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 910pF @ 20V at Vds to protect the device. The input capacitance is specified at 910pF @ 20V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Cut Tape (CT) for safeguarding or transporting components. Style of the enclosure/case SOT-23-6 that offers mechanical and thermal protection. Type of package SOT-23-6 that preserves the integrity of the device. Maximum power capability 2W (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 17.6nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 27mOhm @ 6A, 4.5V for MOSFET specifications. Supplier package type SOT-23-6 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.2V @ 250µA for MOSFET threshold specifications.