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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 280mA | |
| Max On-State Resistance | 7.5Ohm @ 50mA, 5V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 50pF @ 25V | |
| Maximum Power Handling | 250mW | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-563, SOT-666 | |
| Vendor Package Type | SOT-563F |
Description
Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 280mA at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Offers FET traits classified as Logic Level Gate. The maximum input capacitance reaches 50pF @ 25V at Vds to protect the device. The input capacitance is specified at 50pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case SOT-563, SOT-666 that offers mechanical and thermal protection. Type of package SOT-563F that preserves the integrity of the device. Maximum power capability 250mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 7.5Ohm @ 50mA, 5V for MOSFET specifications. Supplier package type SOT-563F for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold specifications.