Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 P-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 25V | |
| Continuous Drain Current at 25C | 120mA | |
| Max On-State Resistance | 10Ohm @ 200mA, 4.5V | |
| Max Threshold Gate Voltage | 1.5V @ 250µA | |
| Max Gate Charge at Vgs | 0.31nC @ 4.5V | |
| Max Input Cap at Vds | 11pF @ 10V | |
| Maximum Power Handling | 700mW | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-23-6 Thin, TSOT-23-6 | |
| Vendor Package Type | SuperSOT™-6 |
Description
Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 120mA at 25°C. Supports a Vdss drain-to-source voltage rated at 25V. Offers FET traits classified as Logic Level Gate. Ensures maximum 0.31nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 0.31nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 11pF @ 10V at Vds to protect the device. The input capacitance is specified at 11pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case SOT-23-6 Thin, TSOT-23-6 that offers mechanical and thermal protection. Type of package SuperSOT™-6 that preserves the integrity of the device. Maximum power capability 700mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 0.31nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 10Ohm @ 200mA, 4.5V for MOSFET specifications. Supplier package type SuperSOT™-6 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold specifications.
