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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | QFET® | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | N and P-Channel | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 60V, 300V | |
| Continuous Drain Current at 25C | 1.3A, 300mA | |
| Max On-State Resistance | 550mOhm @ 650mA, 10V | |
| Max Threshold Gate Voltage | 1.95V @ 20mA | |
| Max Gate Charge at Vgs | 2.1nC @ 5V | |
| Max Input Cap at Vds | - | |
| Maximum Power Handling | 2W | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) | |
| Vendor Package Type | 8-SOIC |
Description
Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 1.3A, 300mA at 25°C. Supports a Vdss drain-to-source voltage rated at 60V, 300V. Ensures maximum 2.1nC @ 5V gate charge at Vgs for improved switching efficiency. Maintains 2.1nC @ 5V gate charge at Vgs for dependable MOSFET operation. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOIC that preserves the integrity of the device. Maximum power capability 2W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 2.1nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 550mOhm @ 650mA, 10V for MOSFET specifications. Classification series for the product or component QFET®. Supplier package type 8-SOIC for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.95V @ 20mA for MOSFET threshold specifications.
