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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate, 10V Drive | |
| Drain-Source Breakdown Volts | 450V | |
| Continuous Drain Current at 25C | 700mA (Tc) | |
| Max On-State Resistance | 12.1Ohm @ 350mA, 10V | |
| Max Threshold Gate Voltage | 4.5V @ 1mA | |
| Max Gate Charge at Vgs | 3.7nC @ 10V | |
| Max Input Cap at Vds | 55pF @ 20V | |
| Maximum Power Handling | 1.6W (Tc) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) | |
| Vendor Package Type | 8-SOIC |
Description
Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 700mA (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 450V. Offers FET traits classified as Logic Level Gate, 10V Drive. Ensures maximum 3.7nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 3.7nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 55pF @ 20V at Vds to protect the device. The input capacitance is specified at 55pF @ 20V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOIC that preserves the integrity of the device. Maximum power capability 1.6W (Tc) for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 3.7nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 12.1Ohm @ 350mA, 10V for MOSFET specifications. Supplier package type 8-SOIC for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 4.5V @ 1mA for MOSFET threshold specifications.
