Stock:
Distributor: 135
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 17.50000 | ₹ 17,50,000.00 |
| 10000 | ₹ 20.89000 | ₹ 2,08,900.00 |
| 1000 | ₹ 23.42000 | ₹ 23,420.00 |
| 500 | ₹ 25.40000 | ₹ 12,700.00 |
| 100 | ₹ 28.22000 | ₹ 2,822.00 |
Stock:
Distributor: 160
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 17.50000 | ₹ 17,50,000.00 |
| 10000 | ₹ 20.89000 | ₹ 2,08,900.00 |
| 1000 | ₹ 23.42000 | ₹ 23,420.00 |
| 500 | ₹ 25.40000 | ₹ 12,700.00 |
| 100 | ₹ 28.22000 | ₹ 2,822.00 |
Stock:
Distributor: 111
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 21.88000 | ₹ 21,88,000.00 |
| 10000 | ₹ 26.11000 | ₹ 2,61,100.00 |
| 1140 | ₹ 29.28000 | ₹ 33,379.20 |
Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 757 | ₹ 35.60000 | ₹ 26,949.20 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 5.8A (Ta) | |
| Max On-State Resistance | 37mOhm @ 5.8A, 10V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 25nC @ 10V | |
| Max Input Cap at Vds | 625pF @ 25V | |
| Maximum Power Handling | 2W (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) | |
| Vendor Package Type | 8-SOIC |
Description
Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 5.8A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Offers FET traits classified as Logic Level Gate. Ensures maximum 25nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 25nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 625pF @ 25V at Vds to protect the device. The input capacitance is specified at 625pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOIC that preserves the integrity of the device. Maximum power capability 2W (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 25nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 37mOhm @ 5.8A, 10V for MOSFET specifications. Supplier package type 8-SOIC for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 250µA for MOSFET threshold specifications.
