Attribute
Description
Manufacturer Part Number
IRF40H233XTMA1
Manufacturer
Description
MOSFET 2N-CH 40V 8TDSON
Manufacturer Lead Time
26 weeks

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Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 40V
Continuous Drain Current at 25C -
Max On-State Resistance -
Max Threshold Gate Voltage -
Max Gate Charge at Vgs -
Max Input Cap at Vds -
Maximum Power Handling -
Ambient Temp Range -
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-PowerTDFN
Vendor Package Type PG-TDSON-8-900

Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Dual). Supports a Vdss drain-to-source voltage rated at 40V. Mounting configuration Surface Mount for structural stability. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Type of package PG-TDSON-8-900 that preserves the integrity of the device. Product status Obsolete concerning availability and lifecycle. Supplier package type PG-TDSON-8-900 for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications.