Attribute
Description
Manufacturer Part Number
CPC3703C
Description
MOSFET N-CH 250V 360MA SOT89-3
Manufacturer Lead Time
39 weeks

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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Obsolete
Field Effect Transistor Type N-Channel, Depletion Mode
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 250 V
Continuous Drain Current at 25C 360mA (Ta)
Gate Drive Voltage Range 0V
Max On-State Resistance 4Ohm @ 200mA, 0V
Max Threshold Gate Voltage -
Max Gate Charge at Vgs -
Maximum Gate Voltage ±15V
Max Input Cap at Vds 350 pF @ 25 V
Transistor Special Function -
Max Heat Dissipation 1.6W (Ta)
Ambient Temp Range -55°C ~ 125°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type SOT-89-3
Component Housing Style TO-243AA

Description

Is capable of sustaining a continuous drain current (Id) of 360mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 250 V. Supports the drive voltage noted at 0V for RdsOn control. Includes FET category defined as N-Channel, Depletion Mode. The maximum input capacitance reaches 350 pF @ 25 V at Vds to protect the device. The input capacitance is specified at 350 pF @ 25 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 125°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case TO-243AA that offers mechanical and thermal protection. Type of package SOT-89-3 that preserves the integrity of the device. The maximum power dissipation 1.6W (Ta) for efficient thermal management. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 4Ohm @ 200mA, 0V for MOSFET specifications. Supplier package type SOT-89-3 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±15V for MOSFET specifications.