Stock:
Distributor: 120
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1311 | ₹ 24.30000 | ₹ 31,857.30 |
| 552 | ₹ 26.17000 | ₹ 14,445.84 |
| 255 | ₹ 29.90000 | ₹ 7,624.50 |
| 75 | ₹ 35.05000 | ₹ 2,628.75 |
| 21 | ₹ 60.74000 | ₹ 1,275.54 |
| 5 | ₹ 93.45000 | ₹ 467.25 |
Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100 | ₹ 31.15000 | ₹ 3,115.00 |
| 25 | ₹ 34.71000 | ₹ 867.75 |
| 1 | ₹ 41.83000 | ₹ 41.83 |
Stock:
Distributor: 118
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 477 | ₹ 32.40000 | ₹ 15,454.80 |
| 87 | ₹ 37.38000 | ₹ 3,252.06 |
| 1 | ₹ 124.60000 | ₹ 124.60 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 25V | |
| Continuous Drain Current at 25C | 48A (Tc) | |
| Max On-State Resistance | 10.5 mOhm @ 10V | |
| Max Threshold Gate Voltage | 1.7V @ 250µA | |
| Gate Charge at Vgs | 10nC @ 4.5V | |
| Input Cap at Vds | 580pF @ 12.5V | |
| Maximum Power Handling | 2.2W, 1.8W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 48A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 25V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 10nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 580pF @ 12.5V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Maximum power capability 2.2W, 1.8W for safeguarding the device. Maximum Rds(on) at Id 10nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 10.5 mOhm @ 10V for MOSFET specifications. Maximum Vgs(th) at Id 1.7V @ 250µA for MOSFET threshold specifications.
