Stock:
Distributor: 120
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 803 | ₹ 39.71000 | ₹ 31,887.13 |
| 338 | ₹ 42.76000 | ₹ 14,452.88 |
| 157 | ₹ 48.87000 | ₹ 7,672.59 |
| 46 | ₹ 57.27000 | ₹ 2,634.42 |
| 13 | ₹ 99.27000 | ₹ 1,290.51 |
| 3 | ₹ 152.72000 | ₹ 458.16 |
Stock:
Distributor: 110
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3300 | ₹ 50.91000 | ₹ 1,68,003.00 |
| 2475 | ₹ 52.06000 | ₹ 1,28,848.50 |
| 1650 | ₹ 55.63000 | ₹ 91,789.50 |
| 825 | ₹ 74.14000 | ₹ 61,165.50 |
| 500 | ₹ 78.32000 | ₹ 39,160.00 |
| 100 | ₹ 161.09000 | ₹ 16,109.00 |
| 25 | ₹ 379.14000 | ₹ 9,478.50 |
| 1 | ₹ 502.85000 | ₹ 502.85 |
Stock:
Distributor: 118
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1346 | ₹ 50.91000 | ₹ 68,524.86 |
| 292 | ₹ 52.95000 | ₹ 15,461.40 |
| 1 | ₹ 203.63000 | ₹ 203.63 |
Stock:
Distributor: 115
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3300 | ₹ 50.91000 | ₹ 1,68,003.00 |
| 2475 | ₹ 52.06000 | ₹ 1,28,848.50 |
| 1650 | ₹ 55.63000 | ₹ 91,789.50 |
| 825 | ₹ 74.14000 | ₹ 61,165.50 |
| 500 | ₹ 78.32000 | ₹ 39,160.00 |
| 100 | ₹ 161.09000 | ₹ 16,109.00 |
| 25 | ₹ 379.14000 | ₹ 9,478.50 |
| 1 | ₹ 502.85000 | ₹ 502.85 |
Stock:
Distributor: 111
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 25 | ₹ 479.92000 | ₹ 11,998.00 |
| 9 | ₹ 636.52000 | ₹ 5,728.68 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 25V | |
| Continuous Drain Current at 25C | 64A (Tc) | |
| Max On-State Resistance | 10.5 mOhm @ 10V | |
| Max Threshold Gate Voltage | 1.7V @ 250µA | |
| Gate Charge at Vgs | 10nC @ 4.5V | |
| Input Cap at Vds | 580pF @ 12.5V | |
| Maximum Power Handling | 2.2W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 64A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 25V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 10nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 580pF @ 12.5V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Maximum power capability 2.2W for safeguarding the device. Maximum Rds(on) at Id 10nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 10.5 mOhm @ 10V for MOSFET specifications. Maximum Vgs(th) at Id 1.7V @ 250µA for MOSFET threshold specifications.
