Description

Configured in a manner identified as 2 N Channel (Phase Leg). Is capable of sustaining a continuous drain current (Id) of 89A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 232nC @ 20V gate charge at Vgs for improved switching efficiency. Maintains 232nC @ 20V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 3020pF @ 1000V at Vds to protect the device. The input capacitance is specified at 3020pF @ 1000V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Type of package SP1F that preserves the integrity of the device. Maximum power capability 395W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 232nC @ 20V for MOSFET performance. Maximum Rds(on) at Id and Vgs 31mOhm @ 40A, 20V for MOSFET specifications. Supplier package type SP1F for component selection. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vgs(th) at Id 2.8V @ 1mA for MOSFET threshold specifications.