Description

Configured in a manner identified as 6 N-Channel (3-Phase Bridge). Is capable of sustaining a continuous drain current (Id) of 251A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 696nC @ 20V gate charge at Vgs for improved switching efficiency. Maintains 696nC @ 20V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 9060pF @ 1000V at Vds to protect the device. The input capacitance is specified at 9060pF @ 1000V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Type of package SP6-P that preserves the integrity of the device. Maximum power capability 1.042kW (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 696nC @ 20V for MOSFET performance. Maximum Rds(on) at Id and Vgs 10.4mOhm @ 120A, 20V for MOSFET specifications. Supplier package type SP6-P for component selection. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vgs(th) at Id 2.8V @ 3mA for MOSFET threshold specifications.