Description

Configured in a manner identified as 2 N-Channel (Dual) Common Source. Is capable of sustaining a continuous drain current (Id) of 124A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1700V (1.7kV). Ensures maximum 356nC @ 20V gate charge at Vgs for improved switching efficiency. Maintains 356nC @ 20V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 6600pF @ 1000V at Vds to protect the device. The input capacitance is specified at 6600pF @ 1000V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Type of package SP3F that preserves the integrity of the device. Maximum power capability 602W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 356nC @ 20V for MOSFET performance. Maximum Rds(on) at Id and Vgs 22.5mOhm @ 60A, 20V for MOSFET specifications. Supplier package type SP3F for component selection. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vgs(th) at Id 3.2V @ 5mA for MOSFET threshold specifications.