Attribute
Description
Manufacturer Part Number
LN100LA-G
Manufacturer
Description
MOSFET 2N-CH 1200V 6LFGA
Manufacturer Lead Time
24 weeks

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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Cascoded)
Transistor Special Function -
Drain-Source Breakdown Volts 1200V (1.2kV)
Continuous Drain Current at 25C -
Max On-State Resistance 3000Ohm @ 2mA, 2.8V
Max Threshold Gate Voltage 1.6V @ 10µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 50pF @ 25V
Maximum Power Handling 350mW
Ambient Temp Range -25°C ~ 125°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-VFLGA
Vendor Package Type 6-LFGA (3x3)

Description

Configured in a manner identified as 2 N-Channel (Cascoded). Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). The maximum input capacitance reaches 50pF @ 25V at Vds to protect the device. The input capacitance is specified at 50pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -25°C ~ 125°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 6-VFLGA that offers mechanical and thermal protection. Type of package 6-LFGA (3x3) that preserves the integrity of the device. Maximum power capability 350mW for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 3000Ohm @ 2mA, 2.8V for MOSFET specifications. Supplier package type 6-LFGA (3x3) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.6V @ 10µA for MOSFET threshold specifications.