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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Core Technology Platform | Silicon Carbide (SiC) | |
| Setup Arrangement | 2 N Channel (Phase Leg) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | 631A (Tc) | |
| Max On-State Resistance | 3.4mOhm @ 500A, 20V | |
| Max Threshold Gate Voltage | 4V @ 150mA | |
| Max Gate Charge at Vgs | 1610nC @ 20V | |
| Max Input Cap at Vds | 27900pF @ 1000V | |
| Maximum Power Handling | 2778W (Tc) | |
| Ambient Temp Range | -40°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | Module | |
| Vendor Package Type | SP6C LI |
Description
Configured in a manner identified as 2 N Channel (Phase Leg). Is capable of sustaining a continuous drain current (Id) of 631A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 1610nC @ 20V gate charge at Vgs for improved switching efficiency. Maintains 1610nC @ 20V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 27900pF @ 1000V at Vds to protect the device. The input capacitance is specified at 27900pF @ 1000V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Type of package SP6C LI that preserves the integrity of the device. Maximum power capability 2778W (Tc) for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 1610nC @ 20V for MOSFET performance. Maximum Rds(on) at Id and Vgs 3.4mOhm @ 500A, 20V for MOSFET specifications. Supplier package type SP6C LI for component selection. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vgs(th) at Id 4V @ 150mA for MOSFET threshold specifications.
