Stock:
Distributor: 160
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 116.59000 | ₹ 11,65,900.00 |
| 1000 | ₹ 123.71000 | ₹ 1,23,710.00 |
| 500 | ₹ 131.72000 | ₹ 65,860.00 |
| 100 | ₹ 138.84000 | ₹ 13,884.00 |
| 25 | ₹ 145.96000 | ₹ 3,649.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 200V | |
| Continuous Drain Current at 25C | 32.7A (Tc) | |
| Max On-State Resistance | 77 mOhm @ 15A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 32.2nC @ 10V | |
| Input Cap at Vds | 1870pF @ 25V | |
| Maximum Power Handling | 230W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 32.7A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 200V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 32.2nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 1870pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB that offers mechanical and thermal protection. Maximum power capability 230W for safeguarding the device. Maximum Rds(on) at Id 32.2nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 77 mOhm @ 15A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 1mA for MOSFET threshold specifications.
