Stock:
Distributor: 118
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 353 | ₹ 70.46000 | ₹ 24,872.38 |
| 165 | ₹ 75.88000 | ₹ 12,520.20 |
| 1 | ₹ 216.80000 | ₹ 216.80 |
Stock:
Distributor: 135
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 120.15000 | ₹ 12,01,500.00 |
| 1000 | ₹ 128.16000 | ₹ 1,28,160.00 |
| 500 | ₹ 135.28000 | ₹ 67,640.00 |
| 100 | ₹ 143.29000 | ₹ 14,329.00 |
| 25 | ₹ 150.41000 | ₹ 3,760.25 |
Stock:
Distributor: 160
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 132.61000 | ₹ 13,26,100.00 |
| 1000 | ₹ 140.62000 | ₹ 1,40,620.00 |
| 500 | ₹ 148.63000 | ₹ 74,315.00 |
| 100 | ₹ 157.53000 | ₹ 15,753.00 |
| 25 | ₹ 165.54000 | ₹ 4,138.50 |
Stock:
Distributor: 111
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 165.76000 | ₹ 16,57,600.00 |
| 1000 | ₹ 175.78000 | ₹ 1,75,780.00 |
| 500 | ₹ 185.79000 | ₹ 92,895.00 |
| 170 | ₹ 196.91000 | ₹ 33,474.70 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 68A (Tc) | |
| Max On-State Resistance | 13.9 mOhm @ 15A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 59nC @ 10V | |
| Input Cap at Vds | 3195pF @ 50V | |
| Maximum Power Handling | 170W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 68A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 100V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 59nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 3195pF @ 50V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 that offers mechanical and thermal protection. Maximum power capability 170W for safeguarding the device. Maximum Rds(on) at Id 59nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 13.9 mOhm @ 15A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 1mA for MOSFET threshold specifications.
