Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 32.1A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 100 V. Supports the drive voltage noted at 10V for RdsOn control. Includes FET category defined as N-Channel. Ensures maximum 46.2 nC @ 10 V gate charge at Vgs for improved switching efficiency. Maintains 46.2 nC @ 10 V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 2404 pF @ 50 V at Vds to protect the device. The input capacitance is specified at 2404 pF @ 50 V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case TO-220-3 Full Pack, Isolated Tab that offers mechanical and thermal protection. Type of package TO-220F that preserves the integrity of the device. The maximum power dissipation 46.1W (Tc) for efficient thermal management. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 46.2 nC @ 10 V for MOSFET performance. Maximum Rds(on) at Id and Vgs 16mOhm @ 10A, 10V for MOSFET specifications. Supplier package type TO-220F for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs ±20V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 1mA for MOSFET threshold specifications.