Description

Configured in a manner identified as 2 N-Channel (Dual) Asymmetrical. Is capable of sustaining a continuous drain current (Id) of 20A, 35A at 25°C. Supports a Vdss drain-to-source voltage rated at 25V. Offers FET traits classified as Logic Level Gate. Ensures maximum 35nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 35nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 2375pF @ 13V at Vds to protect the device. The input capacitance is specified at 2375pF @ 13V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerWDFN that offers mechanical and thermal protection. Type of package Power Clip 56 that preserves the integrity of the device. Maximum power capability 2.1W, 2.3W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 35nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 3.8mOhm @ 20A, 10V for MOSFET specifications. Classification series for the product or component PowerTrench®. Supplier package type Power Clip 56 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold specifications.