Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 100V. Ensures maximum 5.6nC @ 10V, 7.3nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 5.6nC @ 10V, 7.3nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 252pF @ 50V, 256pF @ 50V at Vds to protect the device. The input capacitance is specified at 252pF @ 50V, 256pF @ 50V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerWDFN that offers mechanical and thermal protection. Type of package 8-WDFN (3x3) that preserves the integrity of the device. Maximum power capability 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 5.6nC @ 10V, 7.3nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V for MOSFET specifications. Supplier package type 8-WDFN (3x3) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 3V @ 24µA, 4V @ 40µA for MOSFET threshold specifications.