Attribute
Description
Manufacturer Part Number
FCAB21490L1
Description
MOSFET 2N-CH 10SMD
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts -
Continuous Drain Current at 25C -
Max On-State Resistance -
Max Threshold Gate Voltage 1.4V @ 1.11mA
Max Gate Charge at Vgs 25nC @ 4V
Max Input Cap at Vds 3570pF @ 10V
Maximum Power Handling 3.5W (Ta)
Ambient Temp Range 150°C
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 10-SMD, No Lead
Vendor Package Type 10-SMD

Description

Configured in a manner identified as 2 N-Channel (Dual). Ensures maximum 25nC @ 4V gate charge at Vgs for improved switching efficiency. Maintains 25nC @ 4V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 3570pF @ 10V at Vds to protect the device. The input capacitance is specified at 3570pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 10-SMD, No Lead that offers mechanical and thermal protection. Type of package 10-SMD that preserves the integrity of the device. Maximum power capability 3.5W (Ta) for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 25nC @ 4V for MOSFET performance. Supplier package type 10-SMD for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.4V @ 1.11mA for MOSFET threshold specifications.