Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 4A at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. The maximum input capacitance reaches 1100pF @ 10V at Vds to protect the device. The input capacitance is specified at 1100pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-SMD, Flat Leads that offers mechanical and thermal protection. Type of package WSMINI8-F1-B that preserves the integrity of the device. Maximum power capability 150mW for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 25mOhm @ 2A, 4V for MOSFET specifications. Supplier package type WSMINI8-F1-B for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 1.3V @ 1mA for MOSFET threshold specifications.