Attribute
Description
Manufacturer Part Number
PJQ4602_R1_00001
Manufacturer
Description
MOSFET N/P-CH 30V 6.4A 8DFN
Manufacturer Lead Time
1 week
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
21000 ₹ 21.35000 ₹ 4,48,350.00
15000 ₹ 21.37000 ₹ 3,20,550.00
9000 ₹ 22.47000 ₹ 2,02,230.00
6000 ₹ 23.45000 ₹ 1,40,700.00
3000 ₹ 25.38000 ₹ 76,140.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Not For New Designs
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement N and P-Channel Complementary
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc)
Max On-State Resistance 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V
Max Threshold Gate Voltage 2.1V @ 250µA, 2.5V @ 250µA
Max Gate Charge at Vgs 7.8nC @ 10V
Max Input Cap at Vds 343pF @ 15V, 870pF @ 15V
Maximum Power Handling 2W (Ta), 17.8W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-PowerWDFN
Vendor Package Type DFN3030B-8

Description

Configured in a manner identified as N and P-Channel Complementary. Is capable of sustaining a continuous drain current (Id) of 6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 7.8nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 7.8nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 343pF @ 15V, 870pF @ 15V at Vds to protect the device. The input capacitance is specified at 343pF @ 15V, 870pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-PowerWDFN that offers mechanical and thermal protection. Type of package DFN3030B-8 that preserves the integrity of the device. Maximum power capability 2W (Ta), 17.8W (Tc) for safeguarding the device. Product status Not For New Designs concerning availability and lifecycle. Maximum Rds(on) at Id 7.8nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V for MOSFET specifications. Supplier package type DFN3030B-8 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.1V @ 250µA, 2.5V @ 250µA for MOSFET threshold specifications.