Attribute
Description
Manufacturer Part Number
PJT7802_R1_00001
Manufacturer
Description
MOSFET 2N-CH 20V 0.5A SOT363
Manufacturer Lead Time
1 week
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
3000 ₹ 5.38000 ₹ 16,140.00
1000 ₹ 11.43000 ₹ 11,430.00
500 ₹ 12.81000 ₹ 6,405.00
100 ₹ 17.08000 ₹ 1,708.00
10 ₹ 26.97000 ₹ 269.70
1 ₹ 43.61000 ₹ 43.61

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Not For New Designs
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 500mA (Ta)
Max On-State Resistance 400mOhm @ 500mA, 4.5V
Max Threshold Gate Voltage 1V @ 250µA
Max Gate Charge at Vgs 0.9nC @ 4.5V
Max Input Cap at Vds 39pF @ 10V
Maximum Power Handling 350mW (Ta)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-TSSOP, SC-88, SOT-363
Vendor Package Type SOT-363

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 500mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Ensures maximum 0.9nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 0.9nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 39pF @ 10V at Vds to protect the device. The input capacitance is specified at 39pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-TSSOP, SC-88, SOT-363 that offers mechanical and thermal protection. Type of package SOT-363 that preserves the integrity of the device. Maximum power capability 350mW (Ta) for safeguarding the device. Product status Not For New Designs concerning availability and lifecycle. Maximum Rds(on) at Id 0.9nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 400mOhm @ 500mA, 4.5V for MOSFET specifications. Supplier package type SOT-363 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 250µA for MOSFET threshold specifications.