Attribute
Description
Manufacturer Part Number
PJT7838_R1_00001
Manufacturer
Description
MOSFET 2N-CH 50V 0.4A SOT363
Manufacturer Lead Time
1 week
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
75000 ₹ 6.60000 ₹ 4,95,000.00
30000 ₹ 7.24000 ₹ 2,17,200.00
21000 ₹ 7.53000 ₹ 1,58,130.00
15000 ₹ 7.82000 ₹ 1,17,300.00
9000 ₹ 8.33000 ₹ 74,970.00
6000 ₹ 8.78000 ₹ 52,680.00
3000 ₹ 9.67000 ₹ 29,010.00
1000 ₹ 11.43000 ₹ 11,430.00
500 ₹ 12.81000 ₹ 6,405.00
100 ₹ 17.08000 ₹ 1,708.00
10 ₹ 26.97000 ₹ 269.70
1 ₹ 43.61000 ₹ 43.61

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 50V
Continuous Drain Current at 25C 400mA (Ta)
Max On-State Resistance 1.45Ohm @ 500mA, 10V
Max Threshold Gate Voltage 1V @ 250µA
Max Gate Charge at Vgs 0.95nC @ 4.5V
Max Input Cap at Vds 36pF @ 25V
Maximum Power Handling 350mW (Ta)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-TSSOP, SC-88, SOT-363
Vendor Package Type SOT-363

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 400mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 50V. Ensures maximum 0.95nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 0.95nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 36pF @ 25V at Vds to protect the device. The input capacitance is specified at 36pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-TSSOP, SC-88, SOT-363 that offers mechanical and thermal protection. Type of package SOT-363 that preserves the integrity of the device. Maximum power capability 350mW (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 0.95nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 1.45Ohm @ 500mA, 10V for MOSFET specifications. Supplier package type SOT-363 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 250µA for MOSFET threshold specifications.