Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 4.5A (Ta), 3.5A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 45V. Ensures maximum 9.6nC @ 5V, 18.2nC @ 5V gate charge at Vgs for improved switching efficiency. Maintains 9.6nC @ 5V, 18.2nC @ 5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 550pF @ 10V, 1700pF @ 10V at Vds to protect the device. The input capacitance is specified at 550pF @ 10V, 1700pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOP that preserves the integrity of the device. Maximum power capability 1.4W (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 9.6nC @ 5V, 18.2nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V for MOSFET specifications. Supplier package type 8-SOP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 1mA for MOSFET threshold specifications.