Stock:
Distributor: 160
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 95.23000 | ₹ 9,52,300.00 |
| 1000 | ₹ 101.46000 | ₹ 1,01,460.00 |
| 500 | ₹ 107.69000 | ₹ 53,845.00 |
| 100 | ₹ 113.03000 | ₹ 11,303.00 |
| 25 | ₹ 119.26000 | ₹ 2,981.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 500V | |
| Continuous Drain Current at 25C | 7.1A (Tc) | |
| Max On-State Resistance | 850 mOhm @ 4A, 10V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 24nC @ 10V | |
| Input Cap at Vds | 600pF @ 30V | |
| Maximum Power Handling | 2W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 7.1A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 500V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 24nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 600pF @ 30V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 Full Pack that offers mechanical and thermal protection. Maximum power capability 2W for safeguarding the device. Maximum Rds(on) at Id 24nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 850 mOhm @ 4A, 10V for MOSFET specifications.