Attribute
Description
Manufacturer Part Number
ECH8674-TL-H
Manufacturer
Description
MOSFET 2P-CH 12V 5A SOT28
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 P-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 12V
Continuous Drain Current at 25C 5A (Ta)
Max On-State Resistance 41mOhm @ 3A, 4.5V
Max Threshold Gate Voltage 1.3V @ 1mA
Max Gate Charge at Vgs 6.9nC @ 4.5V
Max Input Cap at Vds 660pF @ 6V
Maximum Power Handling 1.3W (Ta)
Ambient Temp Range 150°C
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-SMD, Flat Lead
Vendor Package Type SOT-28FL/ECH8

Description

Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 5A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 12V. Ensures maximum 6.9nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 6.9nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 660pF @ 6V at Vds to protect the device. The input capacitance is specified at 660pF @ 6V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 8-SMD, Flat Lead that offers mechanical and thermal protection. Type of package SOT-28FL/ECH8 that preserves the integrity of the device. Maximum power capability 1.3W (Ta) for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 6.9nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 41mOhm @ 3A, 4.5V for MOSFET specifications. Supplier package type SOT-28FL/ECH8 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.3V @ 1mA for MOSFET threshold specifications.