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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Obsolete | |
| Core Technology Platform | - | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 24V | |
| Continuous Drain Current at 25C | 6A (Ta) | |
| Max On-State Resistance | 27mOhm @ 3A, 4.5V | |
| Max Threshold Gate Voltage | 1.3V @ 1mA | |
| Max Gate Charge at Vgs | 6.3nC @ 4.5V | |
| Max Input Cap at Vds | - | |
| Maximum Power Handling | 1.3W (Ta) | |
| Ambient Temp Range | 150°C | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SMD, Flat Leads | |
| Vendor Package Type | SOT-383FL, EMH8 |
Description
Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 6A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 24V. Ensures maximum 6.3nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 6.3nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. Mounting configuration Surface Mount for structural stability. Temperature range 150°C for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 8-SMD, Flat Leads that offers mechanical and thermal protection. Type of package SOT-383FL, EMH8 that preserves the integrity of the device. Maximum power capability 1.3W (Ta) for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 6.3nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 27mOhm @ 3A, 4.5V for MOSFET specifications. Supplier package type SOT-383FL, EMH8 for component selection. Maximum Vgs(th) at Id 1.3V @ 1mA for MOSFET threshold specifications.
