Attribute
Description
Manufacturer Part Number
GSFN0232
Description
MOSFET 20V 32A 6DFN
Manufacturer Lead Time
1 week
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
30000 ₹ 15.48000 ₹ 4,64,400.00
21000 ₹ 15.62000 ₹ 3,28,020.00
15000 ₹ 15.77000 ₹ 2,36,550.00
9000 ₹ 16.03000 ₹ 1,44,270.00
6000 ₹ 16.26000 ₹ 97,560.00
3000 ₹ 16.71000 ₹ 50,130.00
1000 ₹ 17.66000 ₹ 17,660.00
500 ₹ 18.42000 ₹ 9,210.00
250 ₹ 19.35000 ₹ 4,837.50
100 ₹ 20.89000 ₹ 2,089.00
25 ₹ 24.10000 ₹ 602.50
10 ₹ 27.06000 ₹ 270.60
1 ₹ 39.16000 ₹ 39.16

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement -
Transistor Special Function -
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 32A (Ta)
Max On-State Resistance 6.7mOhm @ 5.5A, 4.5V
Max Threshold Gate Voltage 1.5V @ 250µA
Max Gate Charge at Vgs 30nC @ 4.5V
Max Input Cap at Vds 1180pF @ 15V
Maximum Power Handling 20W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-WFDFN Exposed Pad
Vendor Package Type 6-DFN (2x3)

Description

Is capable of sustaining a continuous drain current (Id) of 32A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Ensures maximum 30nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 30nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1180pF @ 15V at Vds to protect the device. The input capacitance is specified at 1180pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT) for safeguarding or transporting components. Style of the enclosure/case 6-WFDFN Exposed Pad that offers mechanical and thermal protection. Type of package 6-DFN (2x3) that preserves the integrity of the device. Maximum power capability 20W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 30nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 6.7mOhm @ 5.5A, 4.5V for MOSFET specifications. Supplier package type 6-DFN (2x3) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold specifications.