Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 35000 | ₹ 22.39000 | ₹ 7,83,650.00 |
| 25000 | ₹ 22.57000 | ₹ 5,64,250.00 |
| 15000 | ₹ 22.87000 | ₹ 3,43,050.00 |
| 10000 | ₹ 23.14000 | ₹ 2,31,400.00 |
| 5000 | ₹ 23.68000 | ₹ 1,18,400.00 |
| 2500 | ₹ 24.34000 | ₹ 60,850.00 |
| 1000 | ₹ 25.43000 | ₹ 25,430.00 |
| 500 | ₹ 26.46000 | ₹ 13,230.00 |
| 250 | ₹ 27.71000 | ₹ 6,927.50 |
| 100 | ₹ 29.80000 | ₹ 2,980.00 |
| 25 | ₹ 34.14000 | ₹ 853.50 |
| 10 | ₹ 38.09000 | ₹ 380.90 |
| 1 | ₹ 54.29000 | ₹ 54.29 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Cut Tape (CT) | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 60A (Tc) | |
| Max On-State Resistance | 7mOhm @ 30A, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Max Gate Charge at Vgs | 23.5nC @ 10V | |
| Max Input Cap at Vds | 1335pF @ 15V | |
| Maximum Power Handling | 52W (Tc) | |
| Ambient Temp Range | -50°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN | |
| Vendor Package Type | 8-PPAK (5x5.8) |
Description
Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 60A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 23.5nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 23.5nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1335pF @ 15V at Vds to protect the device. The input capacitance is specified at 1335pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -50°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Cut Tape (CT) for safeguarding or transporting components. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Type of package 8-PPAK (5x5.8) that preserves the integrity of the device. Maximum power capability 52W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 23.5nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 7mOhm @ 30A, 10V for MOSFET specifications. Supplier package type 8-PPAK (5x5.8) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold specifications.
