Attribute
Description
Manufacturer Part Number
GSFP34010
Description
MOSFET 2N-CH 100V 20A 8PPAK
Manufacturer Lead Time
1 week
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
25000 ₹ 15.57000 ₹ 3,89,250.00
15000 ₹ 16.24000 ₹ 2,43,600.00
10000 ₹ 16.95000 ₹ 1,69,500.00
5000 ₹ 18.33000 ₹ 91,650.00
2000 ₹ 20.56000 ₹ 41,120.00
1000 ₹ 22.61000 ₹ 22,610.00
500 ₹ 25.06000 ₹ 12,530.00
100 ₹ 32.65000 ₹ 3,265.00
10 ₹ 50.28000 ₹ 502.80
1 ₹ 80.99000 ₹ 80.99

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 100V
Continuous Drain Current at 25C 20A (Tc)
Max On-State Resistance 34mOhm @ 10A, 10V
Max Threshold Gate Voltage 2.8V @ 250µA
Max Gate Charge at Vgs 16nC @ 10V
Max Input Cap at Vds 1051pF @ 50V
Maximum Power Handling 19W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-PowerVDFN
Vendor Package Type 8-PPAK (5x6)

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 20A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 100V. Ensures maximum 16nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 16nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1051pF @ 50V at Vds to protect the device. The input capacitance is specified at 1051pF @ 50V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT) for safeguarding or transporting components. Style of the enclosure/case 8-PowerVDFN that offers mechanical and thermal protection. Type of package 8-PPAK (5x6) that preserves the integrity of the device. Maximum power capability 19W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 16nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 34mOhm @ 10A, 10V for MOSFET specifications. Supplier package type 8-PPAK (5x6) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.8V @ 250µA for MOSFET threshold specifications.