Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 6.46000 | ₹ 6,46,000.00 |
| 40000 | ₹ 6.60000 | ₹ 2,64,000.00 |
| 28000 | ₹ 6.67000 | ₹ 1,86,760.00 |
| 20000 | ₹ 6.74000 | ₹ 1,34,800.00 |
| 12000 | ₹ 6.86000 | ₹ 82,320.00 |
| 8000 | ₹ 6.96000 | ₹ 55,680.00 |
| 4000 | ₹ 7.18000 | ₹ 28,720.00 |
| 1000 | ₹ 7.75000 | ₹ 7,750.00 |
| 500 | ₹ 8.14000 | ₹ 4,070.00 |
| 250 | ₹ 8.60000 | ₹ 2,150.00 |
| 100 | ₹ 9.38000 | ₹ 938.00 |
| 25 | ₹ 11.00000 | ₹ 275.00 |
| 10 | ₹ 12.45000 | ₹ 124.50 |
| 1 | ₹ 18.68000 | ₹ 18.68 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT) | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | N and P-Channel Complementary | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 12V | |
| Continuous Drain Current at 25C | 5A (Ta) | |
| Max On-State Resistance | 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 6.6nC @ 4.5V, 9.2nC @ 4.5V | |
| Max Input Cap at Vds | 495pF @ 6V, 520pF @ 6V | |
| Maximum Power Handling | 1.9W (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-WDFN Exposed Pad | |
| Vendor Package Type | 6-DFN (2x2) |
Description
Configured in a manner identified as N and P-Channel Complementary. Is capable of sustaining a continuous drain current (Id) of 5A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 12V. Ensures maximum 6.6nC @ 4.5V, 9.2nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 6.6nC @ 4.5V, 9.2nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 495pF @ 6V, 520pF @ 6V at Vds to protect the device. The input capacitance is specified at 495pF @ 6V, 520pF @ 6V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT) for safeguarding or transporting components. Style of the enclosure/case 6-WDFN Exposed Pad that offers mechanical and thermal protection. Type of package 6-DFN (2x2) that preserves the integrity of the device. Maximum power capability 1.9W (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 6.6nC @ 4.5V, 9.2nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V for MOSFET specifications. Supplier package type 6-DFN (2x2) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 250µA for MOSFET threshold specifications.
