Attribute
Description
Manufacturer Part Number
TQM150NB04DCR RLG
Manufacturer
Description
MOSFET 2N-CH 40V 9A 8PDFNU
Manufacturer Lead Time
44 weeks
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 116

Quantity Unit Price Ext. Price
50000 ₹ 43.39000 ₹ 21,69,500.00
25000 ₹ 44.50000 ₹ 11,12,500.00
15000 ₹ 45.67000 ₹ 6,85,050.00
10000 ₹ 46.90000 ₹ 4,69,000.00
5000 ₹ 49.58000 ₹ 2,47,900.00

Stock:

Distributor: 117


Quantity Unit Price Ext. Price
2500 ₹ 47.99000 ₹ 1,19,975.00
1000 ₹ 53.93000 ₹ 53,930.00
500 ₹ 58.21000 ₹ 29,105.00
100 ₹ 73.47000 ₹ 7,347.00
10 ₹ 109.10000 ₹ 1,091.00
1 ₹ 171.61000 ₹ 171.61

Stock:

Distributor: 130


Quantity Unit Price Ext. Price
1 ₹ 162.44000 ₹ 162.44

Stock:

Distributor: 11


Quantity Unit Price Ext. Price
1000 ₹ 284.80000 ₹ 2,84,800.00
100 ₹ 294.59000 ₹ 29,459.00
25 ₹ 327.52000 ₹ 8,188.00
5 ₹ 371.13000 ₹ 1,855.65
1 ₹ 412.96000 ₹ 412.96

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 40V
Continuous Drain Current at 25C 9A (Ta), 39A (Tc)
Max On-State Resistance 15mOhm @ 9A, 10V
Max Threshold Gate Voltage 4V @ 250µA
Max Gate Charge at Vgs 18nC @ 10V
Max Input Cap at Vds 1135pF @ 20V
Maximum Power Handling 2.4W (Ta), 48W (Tc)
Ambient Temp Range -55°C ~ 175°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount, Wettable Flank
Component Housing Style 8-PowerTDFN
Vendor Package Type 8-PDFNU (5x6)

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 9A (Ta), 39A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 40V. Ensures maximum 18nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 18nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1135pF @ 20V at Vds to protect the device. The input capacitance is specified at 1135pF @ 20V at Vds for peak performance. Mounting configuration Surface Mount, Wettable Flank for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Type of package 8-PDFNU (5x6) that preserves the integrity of the device. Maximum power capability 2.4W (Ta), 48W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 18nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 15mOhm @ 9A, 10V for MOSFET specifications. Supplier package type 8-PDFNU (5x6) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 4V @ 250µA for MOSFET threshold specifications.