Description

Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 3A at 25°C. Offers FET traits classified as Logic Level Gate. Ensures maximum 3.9nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 3.9nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 410pF @ 10V at Vds to protect the device. The input capacitance is specified at 410pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Bulk for safeguarding or transporting components. Style of the enclosure/case 9-UFBGA, DSBGA that offers mechanical and thermal protection. Type of package 9-DSBGA that preserves the integrity of the device. Maximum power capability 700mW for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 3.9nC @ 4.5V for MOSFET performance. Classification series for the product or component NexFET™. Supplier package type 9-DSBGA for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 900mV @ 250µA for MOSFET threshold specifications.